AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers
Identifieur interne : 000854 ( Russie/Analysis ); précédent : 000853; suivant : 000855AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers
Auteurs : RBID : Pascal:02-0431354Descripteurs français
- Pascal (Inist)
- Etude expérimentale, Couche épitaxique, Epitaxie jet moléculaire, Méthode couche atomique, Semiconducteur III-V, Indium phosphure, Gallium phosphure, Solution solide, Composition chimique, Matériau modulé, Méthode étude, Gravure sélective, Attaque chimique, Réaction photochimique, Morphologie, Surface, 6855N, InxGa1-xP, Ga In P.
English descriptors
- KwdEn :
- Atomic layer method, Chemical composition, Chemical etching, Epitaxial layers, Experimental study, Gallium phosphides, III-V semiconductors, Indium phosphides, Investigation method, Modulated materials, Molecular beam epitaxy, Morphology, Photochemical reactions, Selective etching, Solid solutions, Surfaces.
Abstract
An alternative way to characterise composition modulation in InxGa1-xP ALMBE layers grown on GaAs (001) substrate at a temperature of 420 °C by selective etching and photo etching is presented for the first time. AFM and TEM examinations revealed characteristic quasi-periodic surface structures consisting of ridges oriented along <110>. We propose that morphology features observed in the experiments are related to composition modulation effects.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">AFM and TEM study of the lateral composition modulation in etched and photo etched In<sub>x</sub>Ga<sub>1-x</sub>P epitaxial layers</title><author><name sortKey="Eremenko, V" uniqKey="Eremenko V">V. Eremenko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Microelectronics, Technol, RAS</s1><s2>142432, Chernogolovka, Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>142432, Chernogolovka, Moscow</wicri:noRegion></affiliation></author><author><name sortKey="Gonzalez, L" uniqKey="Gonzalez L">L. Gonzalez</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Inst. de Microelectronica de Madrid, CNM-CSIC, I.Newton, 8-PTM</s1><s2>28760 Madrid</s2><s3>ESP</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté de Madrid</region></placeName></affiliation></author><author><name sortKey="Gonzalez, Y" uniqKey="Gonzalez Y">Y. Gonzalez</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Inst. de Microelectronica de Madrid, CNM-CSIC, I.Newton, 8-PTM</s1><s2>28760 Madrid</s2><s3>ESP</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté de Madrid</region></placeName></affiliation></author><author><name sortKey="Vdovin, V" uniqKey="Vdovin V">V. Vdovin</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute for Chem. Problems of Microelectronics, B. Tolmach. per. 5</s1><s2>109017 Moscow</s2><s3>RUS</s3><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Vazquez, L" uniqKey="Vazquez L">L. Vazquez</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Department of Surface Physics and Engineering, Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco</s1><s2>28049 Madrid</s2><s3>ESP</s3><sZ>5 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté de Madrid</region></placeName></affiliation></author><author><name sortKey="Aragon, G" uniqKey="Aragon G">G. Aragon</name><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>Dept. de Ciencia de los Materiales e Ingeneria Metalúrgica y Química Inorgánica, Universidad de Cádiz. Apdo. 40</s1><s2>Puerto Real, 11510, Cádiz</s2><s3>ESP</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Andalousie</region></placeName></affiliation></author><author><name sortKey="Herrera, M" uniqKey="Herrera M">M. Herrera</name><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>Dept. de Ciencia de los Materiales e Ingeneria Metalúrgica y Química Inorgánica, Universidad de Cádiz. Apdo. 40</s1><s2>Puerto Real, 11510, Cádiz</s2><s3>ESP</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Andalousie</region></placeName></affiliation></author><author><name sortKey="Briones, F" uniqKey="Briones F">F. Briones</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Inst. de Microelectronica de Madrid, CNM-CSIC, I.Newton, 8-PTM</s1><s2>28760 Madrid</s2><s3>ESP</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté de Madrid</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0431354</idno><date when="2002">2002</date><idno type="stanalyst">PASCAL 02-0431354 INIST</idno><idno type="RBID">Pascal:02-0431354</idno><idno type="wicri:Area/Main/Corpus">00EA76</idno><idno type="wicri:Area/Main/Repository">00F965</idno><idno type="wicri:Area/Russie/Extraction">000854</idno></publicationStmt><seriesStmt><idno type="ISSN">0921-5107</idno><title level="j" type="abbreviated">Mater. sci. eng., B, Solid-state mater. adv. technol.</title><title level="j" type="main">Materials science & engineering. B, Solid-state materials for advanced technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic layer method</term><term>Chemical composition</term><term>Chemical etching</term><term>Epitaxial layers</term><term>Experimental study</term><term>Gallium phosphides</term><term>III-V semiconductors</term><term>Indium phosphides</term><term>Investigation method</term><term>Modulated materials</term><term>Molecular beam epitaxy</term><term>Morphology</term><term>Photochemical reactions</term><term>Selective etching</term><term>Solid solutions</term><term>Surfaces</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Couche épitaxique</term><term>Epitaxie jet moléculaire</term><term>Méthode couche atomique</term><term>Semiconducteur III-V</term><term>Indium phosphure</term><term>Gallium phosphure</term><term>Solution solide</term><term>Composition chimique</term><term>Matériau modulé</term><term>Méthode étude</term><term>Gravure sélective</term><term>Attaque chimique</term><term>Réaction photochimique</term><term>Morphologie</term><term>Surface</term><term>6855N</term><term>InxGa1-xP</term><term>Ga In P</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">An alternative way to characterise composition modulation in In<sub>x</sub>Ga<sub>1-x</sub>P ALMBE layers grown on GaAs (001) substrate at a temperature of 420 °C by selective etching and photo etching is presented for the first time. AFM and TEM examinations revealed characteristic quasi-periodic surface structures consisting of ridges oriented along <110>. We propose that morphology features observed in the experiments are related to composition modulation effects.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-5107</s0></fA01><fA03 i2="1"><s0>Mater. sci. eng., B, Solid-state mater. adv. technol.</s0></fA03><fA05><s2>91-92</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>AFM and TEM study of the lateral composition modulation in etched and photo etched In<sub>x</sub>Ga<sub>1-x</sub>P epitaxial layers</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Containing papers presented at the Ninth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP-IX), Rimini, Italy, 24-28th September 2001</s1></fA09><fA11 i1="01" i2="1"><s1>EREMENKO (V.)</s1></fA11><fA11 i1="02" i2="1"><s1>GONZALEZ (L.)</s1></fA11><fA11 i1="03" i2="1"><s1>GONZALEZ (Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>VDOVIN (V.)</s1></fA11><fA11 i1="05" i2="1"><s1>VAZQUEZ (L.)</s1></fA11><fA11 i1="06" i2="1"><s1>ARAGON (G.)</s1></fA11><fA11 i1="07" i2="1"><s1>HERRERA (M.)</s1></fA11><fA11 i1="08" i2="1"><s1>BRIONES (F.)</s1></fA11><fA12 i1="01" i2="1"><s1>FRIGERI (C.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Institute of Microelectronics, Technol, RAS</s1><s2>142432, Chernogolovka, Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Inst. de Microelectronica de Madrid, CNM-CSIC, I.Newton, 8-PTM</s1><s2>28760 Madrid</s2><s3>ESP</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="03"><s1>Institute for Chem. Problems of Microelectronics, B. Tolmach. per. 5</s1><s2>109017 Moscow</s2><s3>RUS</s3><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Surface Physics and Engineering, Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco</s1><s2>28049 Madrid</s2><s3>ESP</s3><sZ>5 aut.</sZ></fA14><fA14 i1="05"><s1>Dept. de Ciencia de los Materiales e Ingeneria Metalúrgica y Química Inorgánica, Universidad de Cádiz. Apdo. 40</s1><s2>Puerto Real, 11510, Cádiz</s2><s3>ESP</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA15 i1="01"><s1>CNR-MASPEC Institute, Fontanini, Parco Area delle Scienze 371A</s1><s2>43010 Parma</s2><s3>ITA</s3><sZ>1 aut.</sZ></fA15><fA20><s1>269-273</s1></fA20><fA21><s1>2002</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>12899B</s2><s5>354000100544360570</s5></fA43><fA44><s0>0000</s0><s1>© 2002 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>02-0431354</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Materials science & engineering. B, Solid-state materials for advanced technology</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>An alternative way to characterise composition modulation in In<sub>x</sub>Ga<sub>1-x</sub>P ALMBE layers grown on GaAs (001) substrate at a temperature of 420 °C by selective etching and photo etching is presented for the first time. AFM and TEM examinations revealed characteristic quasi-periodic surface structures consisting of ridges oriented along <110>. We propose that morphology features observed in the experiments are related to composition modulation effects.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H55N</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche épitaxique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Epitaxial layers</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Méthode couche atomique</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Atomic layer method</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Método capa atómica</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium phosphure</s0><s2>NK</s2><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium phosphides</s0><s2>NK</s2><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Solution solide</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Solid solutions</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Composition chimique</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Chemical composition</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Matériau modulé</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Modulated materials</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Méthode étude</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Investigation method</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Método estudio</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Gravure sélective</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Selective etching</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Grabado selectivo</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Attaque chimique</s0><s5>14</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Chemical etching</s0><s5>14</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Ataque químico</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Réaction photochimique</s0><s5>15</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Photochemical reactions</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Morphologie</s0><s5>16</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Morphology</s0><s5>16</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Surface</s0><s5>17</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Surfaces</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>6855N</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>InxGa1-xP</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Ga In P</s0><s4>INC</s4><s5>93</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>81</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>81</s5></fC07><fN21><s1>252</s1></fN21><fN82><s1>PSI</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>DRIP International Conference on Defects: Recognition, Imaging and Physics in Semiconductors</s1><s2>9</s2><s3>Rimini ITA</s3><s4>2001-09-24</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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